Progress of Extreme Ultraviolet (EUV) Source Development for Micro-Lithography
نویسندگان
چکیده
منابع مشابه
Extreme ultraviolet interference lithography with incoherent light
In order to address the crucial problem of high-resolution low line-edge roughness resist for extreme ultraviolet (EUV) lithography, researchers require significant levels of access to high-resolution EUV exposure tools. The prohibitively high cost of such tools, even microfield tools, has greatly limited this availability and arguably hindered progress in the area of EUV resists. To address th...
متن کاملDefect tolerant extreme ultraviolet lithography technique
Related Articles Comparison of the effects of downstream H2and O2-based plasmas on the removal of photoresist, silicon, and silicon nitride J. Vac. Sci. Technol. B 31, 021206 (2013) Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam–direct-write lithography J. Vac. Sci. Technol. B 31, 021605 (2013) Origin of defects on...
متن کاملMitigation of fast ions from laser-produced Sn plasma for an extreme ultraviolet lithography source
The authors present evidence of the reduction of fast ion energy from laser-produced Sn plasma by introducing a low energy prepulse. The energy of Sn ions was reduced from more than 5 keV to less than 150 eV nearly without loss of the in-band conversion from laser to 13.5 nm extreme ultraviolet EUV emission as compared with that of a single pulse. The reason may come from the interaction of the...
متن کاملInteraction of a CO2 Laser Pulse With Tin-Based Plasma for an Extreme Ultraviolet Lithography Source
The interaction of a CO2 laser pulse with Sn-based plasma for a 13.5-nm extreme ultraviolet (EUV) lithography source was investigated. It was noted that a CO2 laser with wavelength of 10.6 μm is more sensitive to surface impurities as compared with a Nd:YAG laser with wavelength of 1.06 μm. This reveals that a CO2 laser is more likely absorbed in a thinner layer near the target surface. Compare...
متن کاملIntense plasma discharge source at 13.5 nm for extreme-ultraviolet lithography.
We measured an emission of 6 mJ/pulse at 13.5 nm produced by the Li(2+) Lyman-? transition excited by a fast capillary discharge, using a lithium hydride capillary. 75% of the energy emanated from a spot size of 0.6 mm. The emission is narrow band and would thus be useful in extreme-ultraviolet lithography imaging systems that use Mo:Si multilayer mirrors. The output within the bandwidth of Mo:...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Review of Laser Engineering
سال: 2014
ISSN: 0387-0200,1349-6603
DOI: 10.2184/lsj.42.1_14